基于DBR和Rugate型多层多孔硅优化光致发光性能

doi:10.16085/j.issn.1000-6613.2024-1108

摘要/Abstract

摘要：

制备具有特定频率、强发光强度的发光材料是提升光学传感器品质和性能的关键。本文基于电解法在光照下采用方波电流、正弦波电流对重掺杂n型单晶硅片进行阳极刻蚀，制备了布拉格反射镜型（distributed Bragg reflector，DBR）和梳状滤波器型（Rugate）两种多孔硅（PSi）样品。与恒定刻蚀电流条件下得到的单层（monolayer）多孔硅相比，DBR PSi和Rugate PSi表现出双重优异的光学特性，即狭窄波长分布的布拉格反射光谱和光致发光光谱。采用电子扫描显微镜（SEM）表征分析DBR PSi、Rugate PSi和单层PSi样品的形貌结构。结合刻蚀参数及SEM表征结果，讨论了DBR PSi和Rugate PSi样品具有优异反射光谱和光致发光光谱的形成机理。DBR PSi和Rugate PSi的反射光谱和光致发光光谱重叠于相同波长，两种光波发生相长干涉，有效增强了光致发光强度。

关键词: 量子点, 折射率, 多孔硅, 光致发光, 反射

Abstract:

The key to improve the quality and performance of optical sensors is to prepare luminescent materials with specific frequency and strong luminescence intensity. Two kinds of porous silicon (PSi) samples, namely Distributed Bragg Reflector (DBR) and rugate filter (Rugate), were prepared by electrolysis method by anodic etching of heavily doped N-type monocrystal silicon with square wave current and sinusoidal wave current under illumination. Compared with monolayer porous silicon obtained by constant etching current, DBR PSi and Rugate PSi exhibited double excellent optical properties, namely Bragg reflection and photoluminescence spectra with narrow wavelength distribution. The morphology and structure of DBR PSi, Rugate PSi and single-layer PSi samples were characterized by electron scanning microscope (SEM). The formation mechanism of DBR PSi and Rugate PSi samples with excellent reflection spectra and photoluminescence spectra was discussed based on etching parameters and SEM characterization results. The reflection and photoluminescence spectra of DBR PSi and Rugate PSi overlapped at the same wavelength through the precise adjustment of etching current, etching time and layer number. The two light waves interfered with each other in phase length, which effectively enhanced the photoluminescence intensity.

Key words: quantum dot, refractive index, porous silicon, photoluminescence, reflectivity

中图分类号:

O433.4

周自成, 贺洁雅, 孔令伟, 范小振. 基于DBR和Rugate型多层多孔硅优化光致发光性能[J]. 化工进展, 2025, 44(9): 5285-5291.

ZHOU Zicheng, HE Jieya, KONG Lingwei, FAN Xiaozhen. Optimization of photoluminescence properties based on DBR and Rugate multilayer structure of porous silicon[J]. Chemical Industry and Engineering Progress, 2025, 44(9): 5285-5291.

图/表 6

图1 多孔硅制备装置

表1 DBR PSi的电化学腐蚀循环程序

电流密度/mA·cm^-2	时间/s
31	4.2
0	2
320	1.14
0	2

图2 不同PSi样品在日光和紫外光下的上表面外观

图3 不同PSi样品的上表面和横切面电镜图片

图4 DBR、Rugate和单层（只有光致发光光谱）PSi样品的布拉格反射光谱和光致发光光谱

图5 PSi量子点的光致发光光谱

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