硅基前体在先进集成电路制造中的应用与技术进展

doi:10.16085/j.issn.1000-6613.2024-1079

化工进展 ›› 2025, Vol. 44 ›› Issue (9): 5255-5264.DOI: 10.16085/j.issn.1000-6613.2024-1079

• 精细化工 • 上一篇

硅基前体在先进集成电路制造中的应用与技术进展

刘见华¹^,²^,³(), 袁振军²^,⁴, 常欣²^,⁴, 赵喜哲²^,⁴, 万烨¹^,²^,³(), 余学功¹(), 杨德仁¹

^1.浙江大学材料科学与工程学院和硅及先进半导体材料全国重点实验室，浙江杭州 310027
^2.洛阳中硅高科技有限公司，河南洛阳 471100
^3.中国恩菲工程技术有限公司，北京 100038
^4.硅基材料制备技术国家工程研究中心，河南洛阳 471100

收稿日期:2024-07-05 修回日期:2024-08-02 出版日期:2025-09-25 发布日期:2025-09-30
通讯作者: 万烨,余学功
作者简介:刘见华（1987—），男，博士研究生，研究方向为集成电路用硅基前体。E-mail：liujh@sinosico.com。
基金资助:
工信部产业基础再造和制造业高质量发展专项(TC230A076-228)

Application and technological progress of silicon-based precursors in advanced integrated circuit manufacturing

LIU Jianhua¹^,²^,³(), YUAN Zhenjun²^,⁴, CHANG Xin²^,⁴, ZHAO Xizhe²^,⁴, WAN Ye¹^,²^,³(), YU Xuegong¹(), YANG Deren¹

^1.State Key Lab of Silicon and Advanced Semiconductor Materials and School of Materials Science and & Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, China
^2.China Silicon Corporation Ltd. , Luoyang 471100, Henan, China
^3.China ENFI Engineering Co. , Ltd. , Beijing 100038, China
^4.National Engineering Research Center of Silicon-based Materials Preparation Technology, Luoyang 471100, Henan, China

Received:2024-07-05 Revised:2024-08-02 Online:2025-09-25 Published:2025-09-30
Contact: WAN Ye, YU Xuegong

摘要/Abstract

摘要：

随着集成电路制造技术的发展，特别是进入28nm/14nm/7nm等先进制程，对晶体管器件、工艺和材料提出了新的要求。硅基前体材料因其高纯度和特定性能参数，在晶圆制造的外延工艺、光刻工艺、化学气相沉积（CVD）和原子层沉积（ALD）中扮演着关键角色。文章重点分析和讨论了几种主要的硅基前体材料在先进集成电路制造中的应用现状、研究进展以及合成和提纯工艺技术，包括五氯乙硅烷（PCDS）、新戊硅烷（NPS）、二甲基二甲氧基硅烷（DMDMOS）、二乙氧基甲基硅烷（DEMS）、二异丙胺基硅烷（DIPAS）、六甲基二硅氮烷（HMDS）、正硅酸乙酯（TEOS）、一氯硅烷（MCS）、三甲硅烷基胺（TSA）和双(叔丁氨基)硅烷（BTBAS）等。

关键词: 硅基前体, 先进集成电路, 化学气相沉积, 原子层沉积, 合成工艺, 提纯技术

Abstract:

This paper presents a review of the application and technological progress of silicon-based precursors in advanced integrated circuit manufacturing. With the advancement of integrated circuit fabrication technology, particularly in the development of advanced processes such as 28nm/14nm/7nm, new requirements were being established for transistor devices, processes and materials. Silicon-based precursor materials played a pivotal role in epitaxial processes, lithographic processes, chemical vapour deposition (CVD) and atomic layer deposition (ALD) for wafer fabrication due to their high purity and specific performance parameters. The article analyzed and discussed the current application status, research progress, as well as synthesis and purification process technologies of several major silicon-based precursor materials, including pentachloroethylsilane (PCDS), diethoxymethylsilane (DEMS), diisopropylaminosilane (DIPAS), hexamethyldisilazane (HMDS), ethyl orthosilicate (TEOS), monochlorosilane (MCS), trimethylsilylamine (TSA), bis(tert-butylamino)silane (BTBAS) and others.

Key words: silicon-based precursors, advanced integrated circuits, CVD, ALD, synthesis process, purification technology

中图分类号:

TN304

刘见华, 袁振军, 常欣, 赵喜哲, 万烨, 余学功, 杨德仁. 硅基前体在先进集成电路制造中的应用与技术进展[J]. 化工进展, 2025, 44(9): 5255-5264.

LIU Jianhua, YUAN Zhenjun, CHANG Xin, ZHAO Xizhe, WAN Ye, YU Xuegong, YANG Deren. Application and technological progress of silicon-based precursors in advanced integrated circuit manufacturing[J]. Chemical Industry and Engineering Progress, 2025, 44(9): 5255-5264.

图/表 4

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硅基前体在先进集成电路制造中的应用与技术进展

Application and technological progress of silicon-based precursors in advanced integrated circuit manufacturing

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