流化床-化学气相沉积技术的应用及研究进展

doi:10.16085/j.issn.1000-6613.2016.05.001

摘要/Abstract

摘要： 流化床-化学气相沉积(FB-CVD)技术是一种多学科交叉的材料制备技术,兼有流化床传热传质性能良好以及化学气相沉积均匀、产物单一等优点,在工业生产中有着广泛的应用,但因其属于交叉学科,散见于各种研究,没有进行专门的进展评述。本文拟对FB-CVD的工业应用进行专题综述,分析其发展和研究趋势。首先探讨了FB-CVD的基本原理,分别综述了其在颗粒包覆、一维纳米材料、多晶硅制备、颗粒表面改性及粉体制备等方面的应用,介绍了FB-CVD的过程模拟及反应器结构优化方面的研究进展。通过以上讨论,梳理了FB-CVD研究的科学内涵。可以看出,该过程具有明显的多尺度特征,即材料制备的微观层次、颗粒流化均匀性的介观层次以及反应器结构设计的宏观尺度。总结得出:FB-CVD技术的未来发展取决于3个尺度的耦合分析,其研究重点也应关注尺度间的相互影响效应,如材料制备的均相成核、非均相成核和颗粒流化及运动规律的相互耦合等。

关键词: 流化床-化学气相沉积, 材料制备, 过程分析, 多尺度耦合

Abstract: Fluidized bed-chemical vapor deposition (FB-CVD) is widely used in industrial production owing to the combined advantages of both fluidized bed and chemical vapor deposition. Providing good heat and mass transfer, it can obtain a pure product with uniform deposition. Based on its basic principle, the applications of FB-CVD in areas of particle coating, preparation of one-dimensional nano-materials, polycrystalline silicon, powder synthesis and powder surface modification are reviewed. The progress of process simulation and reactor structure design of FB-CVD is introduced. From the discussion, the scientific connotation of FB-CVD shows multi-scale features, namely material preparation at microscopic level, particle fluidization at mesoscopic level and reactor structure design at macroscopic level. Future development of FB-CVD technology depends on coupling analysis of these three scales, and research should be focused on the effect of interaction between different scales, such as coupling between homogeneous nucleation material/non-homogeneous nucleation in materials preparation and particle fluidization in the reactor.

Key words: fluidized bed chemical vapor deposition, material preparation, process research, multi-scale coupling

中图分类号:

TQ03-39

刘荣正, 刘马林, 邵友林, 刘兵. 流化床-化学气相沉积技术的应用及研究进展[J]. 化工进展, 2016, 35(05): 1263-1272.

LIU Rongzheng, LIU Malin, SHAO Youlin, LIU Bing. Application and research progress of fluidized bed-chemical vapor deposition technology[J]. Chemical Industry and Engineering Progree, 2016, 35(05): 1263-1272.

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