分子吸收光谱在半导体薄膜化学气相沉积中的应用

doi:10.16085/j.issn.1000-6613.2015.11.024

化工进展 ›› 2015, Vol. 34 ›› Issue (11): 3979-3984,4000.DOI: 10.16085/j.issn.1000-6613.2015.11.024

分子吸收光谱在半导体薄膜化学气相沉积中的应用

汪文鹄¹, 左然¹, 刘鹏^2,3, 童玉珍^2,3, 张国义^2,3

1 江苏大学能源与动力工程学院, 江苏镇江 212013;
2 北京大学物理学院宽禁带半导体研究中心, 北京 100871;
3 东莞中镓半导体科技有限公司, 广东东莞 523500

收稿日期:2015-03-19 修回日期:2015-05-11 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: 左然,教授,博士生导师,研究方向为晶体生长及MOCVD的理论分析与模拟。E-mailrzuo@ujs.edu.cn。
作者简介:汪文鹄(1990—),男,硕士研究生,研究方向为MOCVD过程气体浓度测。E-mailmrfive90@163.com。
基金资助:
国家自然科学基金(61176009,61474058)、国家重点基础研究发展计划(2011CB013101)、国家高技术研究发展计划(2014AA032605)及国家自然科学基金重大仪器装备专项(61327801)。

Applications of molecular absorption spectrum on semiconductor CVD growth

WANG Wenhu¹, ZUO Ran¹, LIU Peng^2,3, TONG Yuzhen^2,3, ZHANG Guoyi^2,3

1 School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China;
2 Wide Bandgap Semiconductor Research Center, School of Physics, Peking University, Beijing 100871, China;
3 Sino Nitride Semiconductor Co., Ltd., Dongguan 523500, Guangdong, China

Received:2015-03-19 Revised:2015-05-11 Online:2015-11-05 Published:2015-11-05

摘要/Abstract

摘要： 在化学气相沉积(CVD)生长半导体薄膜过程中,反应前体的浓度测量对于了解反应机理至关重要。紫外-可见吸收光谱和红外光谱是测量半导体薄膜CVD生长中分子浓度的主要工具,特别是可以实现气体浓度的原位测量。本文介绍了CVD中紫外-可见吸收光谱的测量系统,以及它们在测量Ⅲ～Ⅴ族气体浓度和确定在不同条件下化学反应路径中的应用。包括常见金属有机物等气体的吸收特征,紫外-可见吸收光谱在不同温度和压力下CVD过程中InN、GaN薄膜生长中的应用。本文也介绍了红外光谱分析方法在CVD中的应用,包括不同条件下TMG和NH₃气相反应机理的分析、SiC薄膜的元素成分分析以及GaN薄膜的气相反应速率的确定。

关键词: 化学气相沉积, 气体浓度, 紫外-可见吸收光谱, 红外光谱

Abstract: In the chemical vapor deposition (CVD) of the compound semiconductor thin film process, measurement of gas concentrations is crucial to the understanding of reaction mechanism. UV-visible absorption spectrum (UVAS) and infrared spectrum (IR) are the main methods to measure gas concentrations, and used for in situ measurement of gas concentrations. CVD measurements system of UVAS and its applications on measuring concentrations of group Ⅲ—Ⅴ gases are introduced, including absorption characteristics of metal organic materials etc. and applications of UVAS on mechanism of InN and GaN growth processes at different temperatures and pressures. Finally, applications of IR spectrum is introduced, including analysis of gas-phase reaction between TMG and NH₃ under different conditions, analysis of SiC thin film compositions, and determinination of gas phase reaction rate for GaN growth process.

Key words: chemical vapor deposition, gas concentration, UVAS, IR

中图分类号:

TN30
TB43

汪文鹄, 左然, 刘鹏, 童玉珍, 张国义. 分子吸收光谱在半导体薄膜化学气相沉积中的应用[J]. 化工进展, 2015, 34(11): 3979-3984,4000.

WANG Wenhu, ZUO Ran, LIU Peng, TONG Yuzhen, ZHANG Guoyi. Applications of molecular absorption spectrum on semiconductor CVD growth[J]. Chemical Industry and Engineering Progree, 2015, 34(11): 3979-3984,4000.

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分子吸收光谱在半导体薄膜化学气相沉积中的应用

Applications of molecular absorption spectrum on semiconductor CVD growth

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