硫代硫酸盐法浸出废旧IC芯片中金的试验研究

doi:10.16085/j.issn.1000-6613.2015.03.046

化工进展 ›› 2015, Vol. 34 ›› Issue (3): 884-890.DOI: 10.16085/j.issn.1000-6613.2015.03.046

• 资源与环境化工 • 上一篇

硫代硫酸盐法浸出废旧IC芯片中金的试验研究

陈立乐¹, 王景伟¹, 白建峰¹, 王鹏程², 赵新²

1. 上海第二工业大学电子废弃物资源化产学研合作开发中心, 上海 201209;
2. 中国电器科学研究院有限公司, 广东广州 510275

收稿日期:2014-08-19 修回日期:2014-09-16 出版日期:2015-03-05 发布日期:2015-03-05
通讯作者: 王景伟,教授,研究方向为电子废弃物资源化。E-mail:jwwang@sspu.edu.cn。
作者简介:陈立乐(1988-),男,硕士研究生,研究方向为电子废弃物资源化。E-mail:lilech@aliyun.com。
基金资助:
上海市教委创新重点项目(12ZZ194)、国家自然科学基金(21307080)、广东省战略新兴产业项目(2012A032300017)及校重点学科建设项目(XXKYS1404)

Experimental study of gold leaching from waste IC with thiosulfate

CHEN Lile¹, WANG Jingwei¹, BAI Jianfeng¹, WANG Pengcheng², ZHAO Xin²

1. Cooperative Centre for WEEE Recycling, Shanghai Second Polytechnic University, Shanghai 201209, China;
2. China Electric Apparatus Research Institute Co., Ltd., Guangzhou 510275, Guangdong, China

Received:2014-08-19 Revised:2014-09-16 Online:2015-03-05 Published:2015-03-05

摘要/Abstract

摘要： 介绍了当前电子废弃物中常用的浸金方法及其优缺点, 分析了电子废弃物中硫代硫酸盐法浸金的研究现状。针对这一研究现状, 本文采用碱性Na₂S₂O₃溶液中添加Cu²⁺的方法, 对废旧IC(integrated circuit)芯片中金的浸出进行了试验研究。通过对IC样品进行机械预处理、粒度分析、解离度分析、化学预处理和浸金试验, 探讨了Na₂S₂O₃浓度、Cu²⁺浓度、NH₃浓度、浸出温度、浸出时间和反应液固比6个因素对金浸出率的影响。试验得出最佳浸金条件为:Na₂S₂O₃浓度0.3mol/L, Cu²⁺浓度0.03mol/L, NH₃浓度0.5mol/L, 添加3.5g/L的Na₂SO₃作为稳定剂, 浸取温度50℃, 浸取时间2.5h, 液固比10:1, 在最佳浸出条件下, 金的最高浸出率为92.25%。与传统方法相比, 该方法具有浸出速度快、浸出液无毒、操作简单等优点, 是一种具有开发潜力的电子废弃物浸金方法。

关键词: 粉碎, 分离, 硫代硫酸钠, 废旧芯片, 回收, 浸金

Abstract: This paper described the current commonly e-waste gold leaching methods, their advantages and disadvantages, and analyzed research status of e-waste thiosulfate gold leaching. Gold leaching from waste integrated circuit (IC) using the alkaline sodium thiosulfate solution with copper iron was investigated. Through the mechanical pretreatment, particle size analysis, dissociate-ion analysis, chemical pretreatment and gold leaching experiments, the effects on gold leaching rate of Na₂S₂O₃ concentration, Cu²⁺ concentration, NH₃ concentration, temperature, leaching time and liquid to solid ratio were discussed, and optimum gold leaching conditions were obtained:0.3mol/L of Na₂S₂O₃, 0.03mol/L of Cu²⁺, 0.5mol/L of NH₃, 3.5g/L of Na₂SO₃ as the stabilizer, leaching temperature of 50℃, leaching time of 2.5h, liquid to solid ratio of 10:1. Under these conditions, the highest rate of gold leaching was 92.25%. Compared with traditional methods, the new method had advantages of fast leaching speed, non-toxic leachate and easy operation.

Key words: crushing, separation, sodium thiosulfate, waste integrated circuit, recovery, gold leaching

中图分类号:

X750

陈立乐, 王景伟, 白建峰, 王鹏程, 赵新. 硫代硫酸盐法浸出废旧IC芯片中金的试验研究[J]. 化工进展, 2015, 34(3): 884-890.

CHEN Lile, WANG Jingwei, BAI Jianfeng, WANG Pengcheng, ZHAO Xin. Experimental study of gold leaching from waste IC with thiosulfate[J]. Chemical Industry and Engineering Progree, 2015, 34(3): 884-890.

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硫代硫酸盐法浸出废旧IC芯片中金的试验研究

Experimental study of gold leaching from waste IC with thiosulfate

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