电化学Ta2O5薄膜漏电流机理的研究进展

化工进展

电化学Ta2O5薄膜漏电流机理的研究进展

石维1，2，杨邦朝1，张选红2，方鸣2，马建华2，李玮1，王兴伟2

1电子科技大学，四川成都 610054；2中国振华电子集团有限公司，贵州贵阳550018

出版日期:2013-04-05 发布日期:2013-04-05

Research progress of formation mechanisms of electrochemically prepared Ta2O5 thin films

SHI Wei1，YANG Bangchao1，ZHANG Xuanhong2，FANG Ming2，MA Jianhua2，Li Wei1，WANG Xingwei2

1University of Electronic Science and Technology of China，Chengdu 610054，Sichuan，China；2China Zhenhua Electronics Group，Guiyang 550018，Guizhou，China

Online:2013-04-05 Published:2013-04-05

摘要/Abstract

摘要： 介绍了阳极Ta2O5薄膜的电化学形成机理，并重点分析了电化学形成的Ta2O5薄膜漏电流机理的研究进展。描述了影响电化学Ta2O5薄膜生长的关键因素，包括氧含量、杂质缺陷和薄膜晶化等；分析了Ta2O5薄膜漏电流机理，如空间电荷限制电流（SCLC）、Fowler-Nordheim (F-N)导电机理、Pool-Frenkel (PF) 发射、Schottky (S) 发射等。最后展望了降低电化学Ta2O5薄膜材料的漏电流的理论及技术发展前景，Ta2O5薄膜后期的热处理、高分子增强塑性和复合薄膜技术等方面的新技术的应用将值得期待。

关键词: 电化学方法, Ta2O5薄膜, 钽电解电容器, 漏电流

Abstract: Research on formation mechanisms of electrochemical Ta2O5 thin films is reviewed. The emphasis is on the mechanism of leakage current in response to light for electrochemical Ta2O5 thin films. The influence factors for the formation of Ta2O5 thin films，including oxygen content，impurities and crystallization are described. The mechanisms of leakage current，such as the Fowler-Nordheim (F-N) conductive mechanism，space charge limited current (SCLC)，Pool-Frenkel (PF) emission and Schottky (S) emission are outlined. The theory and technology for decreasing leakage current Ta2O5 thin films are prospected. New technology applications，including Ta2O5 thin film heat treatment，high polymer enhanced plastic and composite thin film are expected.

Key words: electrochemistry, Ta2O5 thin films, tantalum electrolytic capacitor, leakage current

石维1，2，杨邦朝1，张选红2，方鸣2，马建华2，李玮1，王兴伟2. 电化学Ta2O5薄膜漏电流机理的研究进展[J]. 化工进展.

SHI Wei1，YANG Bangchao1，ZHANG Xuanhong2，FANG Ming2，MA Jianhua2，Li Wei1，WANG Xingwei2. Research progress of formation mechanisms of electrochemically prepared Ta2O5 thin films[J]. Chemical Industry and Engineering Progree.