Abstract: Zn1－xMnxO thin films of the different substrate temperatures and the defferent doping proportion were grown on SiO2 substrates by pulsed laser deposition ( PLD). XRD，AFM，UV-Vis spectrophotometer were used to characterize ZnO films. The results indicated that the films had mainly (103) peaks and rather flat surface. Absorption spectra showed that ZnO thin films had obvious absorption sides at about 378nm and there was no evident change in absorption with substrate temperature. Through analysis of Zn1－xMnxO thin films absorption spectrum，it was found that Mn-doping changed the ZnO thin film energy gap. Along with increasing amount of Mn-doping，thin film energy gap increased. Thin films light absorption also transited from direct jump to indirect jump process.