Abstract: Based on the characteristics of CVD process and the requirements for film growth，temperature，chemical species and fluid flow are considered as the most important process parameters to be monitored and measured. Various CVD process monitoring methods used at present are summarized. These methods are summarized in tables together with a brief description of their principles，and the advantages and disadvantages of each method. Emphases are given to currently prevalent methods. The progress on in-situ monitoring and measurement of the CVD process is introduced.