Abstract: The recent progress in the preparation of silicon nanowires is reviewed，including the methods of laser ablation，chemical vapor deposition (CVD)，thermal evaporation，solution-growth，electrochemical technique and direct growth on silicon substrate. Advantages and disadvantages of these different methods in controlled preparation of silicon nanowires are discussed. A comprehensive review is given on the latest progress in the applications of silicon nanowires for sensors，optoelectronic devices and lithium ion battery. Finally，the existing problems and the research development trends are discussed.

摘要： 综述了硅纳米线制备技术的最新进展，系统介绍了激光烧蚀法、化学气相沉积法、热蒸发法、溶液法、电化学法和硅衬底直接生长法等方法，比较了不同方法在硅纳米线可控制备中的优缺点，着重阐述了硅纳米线在传感器、光电子器件、锂离子电池等方面的潜在应用，探讨了目前存在的问题及其今后的研究发展方向。