Abstract: The powders of doped ZnO were synthesized by the solid-state reaction at a low temperature and the co-precipitation method respectively. Then the ZnO varistors were prepared at different sintering temperatures. The properties of the powders were characterized by means of XRD，SEM，TEM and BET，and the composition，microstructure of ZnO varistors were determined by XRD and SEM. The results showed that the average size of dope ZnO powders synthesized by the solid-state reaction at a low temperature was 23.95 nm，and that of doped ZnO powders by the co-precipitation method was 188 nm. The ZnO varistors prepared from the solid-state reaction powders and sintered at 1 080 ℃ had the following electric properties：potential gradient of 791.64 V/mm，nonlinear coefficient of 24.36. The ZnO varistors prepared from the co-precipitation powders and sintered at 1 130 ℃ had the following electric properties：potential gradient of 330.99 V/mm，nonlinear coefficient of 19.7.

摘要： 分别采用低温固相化学法和共沉淀法合成掺杂ZnO粉体，并用这两种粉体在不同温度下烧结制备了ZnO压敏电阻。借助XRD、SEM、TEM、BET等检测手段对粉体产物的性能进行了表征，采用XRD、SEM等手段对ZnO压敏陶瓷的物相、结构进行了分析，并对两种方法制备的粉体及压敏电阻的性能进行了比较研究。结果表明：采用低温固相化学法合成的粉体平均粒径为23.95 nm，用其制备ZnO压敏电阻的最佳烧结温度是1 080 ℃，其电位梯度为791.64 V/mm，非线性系数是24.36；采用共沉淀法合成的粉体平均粒径为188 nm，用其制备ZnO压敏电阻的最佳烧结温度是1 130 ℃，其电位梯度为330.99 V/mm、非线性系数是19.70，低温固相化学法制备的ZnO压敏电阻性能优于共沉淀法制备的ZnO压敏电阻。