化工进展

• 应用技术 • 上一篇    

基于ChemCAD的三氯氢硅尾气处理过程模拟及优化

吴 正 勇   

  1. 四川化工职业技术学院,四川 泸州 646005
  • 出版日期:2011-10-05 发布日期:2011-10-05

Simulation and optimization of the exhaust gas treatment process of trichlorosilane by ChemCAD

WU Zhengyong   

  1. Sichuan College of Chemical Technology,Luzhou 646005,Sichuan,China
  • Online:2011-10-05 Published:2011-10-05

摘要:

通过ChemCAD流程模拟软件对实际年产7000 t三氯氢硅的生产流程进行模拟、分析,改进三氯氢硅合成所产生尾气的处理。原工况为合成气深冷分离废气进入三废系统,新工况将原工况的深冷后的气体压缩后再次深冷分离。使废气的排放量减小至原工艺的8%左右,减少了尾气排放的污染,产生了良好的经济和环境效益。

Abstract:

Process simulation of synthesis and separation of trichlorosilane is realized by ChemCADbased on the design data of 7000t/a trichlorosilane. The treatment of the exhaust gas from trichlorosilane synthesis has been improved by simulation result. In original conditionwaste gas is separated from synthesis gas cryogenicallyand then piped into waste deposal systemwhile in new conditioncryogenic gas in original condition is further compressed and separated cryogenically. The exhaust gas emission is reduced by about 8%which make the process more favorite in both environment and economy.

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