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Synthesis of CuO nanowires from microwires

SONG Xue1,2,YANG Guangcheng2,3,NIE Fude3   

  1. 1Institute of Materials Science and Engineering,Southwest University of Science and Technology,Mianyang 621010,Sichuan,China;2New Material Research Center,Institute of Chemical Materials,China Academy of Engineering Physics,Mianyang 621900,Sichuan,China;3Institute of Chemical Materials,China Academy of Engineering Physics,Mianyang 621900,Sichuan,China
  • Online:2012-08-05 Published:2012-08-05

用热氧化法在微米丝上制备CuO纳米线

宋 薛1,2,杨光成2,3,聂福德3   

  1. 1西南科技大学材料科学与工程学院,四川 绵阳 621010;2中国工程物理研究院化工材料研究所新材料研发中心,四川 绵阳 621900;3中国工程物理研究院化工材料研究所,四川 绵阳 621900

Abstract: CuO nanowires with a diameter of 50—80 nm and a length of several micrometers were prepared from a microwire with a diameter of 30 ?m by integrating electroplating and thermal oxidation. The effects of the oxidation time and temperature on CuO nanowire growth were investigated. The results indicate that the length of the nanowires increases when oxidation time increases and better uniformity can be obtained after 4 h oxidation. It also indicates that aligned and vertical CuO nanowires can grow well under 450—500 ℃. When oxidation was conducted under 500 ℃ for more than 4 h,and cooled down naturally to room temperature,large amount of long and uniform nanowires were formed.

Key words: CuO nanowires, thermal oxidation method, SEM

摘要: 采用电镀和热氧化相结合的方法,在直径为30 ?m的丝上成功制备了直径为50~80 nm、长度在几个至十几个微米的CuO纳米线,并研究了温度和热氧化时间对其生长情况的影响。实验结果表明,随着热氧化时间延长,纳米线长度增加,保温4 h后均匀性也得到较好保证。热氧化温度在450~500 ℃内CuO纳米线可以较好生长。在500 ℃下保温4 h后,自然冷却至室温,沿着微米丝表面垂直生长成均一排列的CuO纳米线阵列。

关键词: CuO纳米线, 热氧化法, 扫描电子显微镜

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