Abstract: Zn1－xMnxO thin films of the different substrate temperatures and the defferent doping proportion were grown on SiO2 substrates by pulsed laser deposition ( PLD). XRD，AFM，UV-Vis spectrophotometer were used to characterize ZnO films. The results indicated that the films had mainly (103) peaks and rather flat surface. Absorption spectra showed that ZnO thin films had obvious absorption sides at about 378nm and there was no evident change in absorption with substrate temperature. Through analysis of Zn1－xMnxO thin films absorption spectrum，it was found that Mn-doping changed the ZnO thin film energy gap. Along with increasing amount of Mn-doping，thin film energy gap increased. Thin films light absorption also transited from direct jump to indirect jump process.

摘要： 用脉冲激光沉积（PLD）法在SiO2基片上制备了ZnO薄膜和Zn1－xMnxO薄膜。X射线衍射、原子力显微镜、紫外-可见分光光度计对ZnO薄膜的测试结果表明：薄膜具有（103）面的择优取向，表面比较平坦；SiO2基片上制备的薄膜在387 nm附近存在明显的吸收边，且薄膜的吸收对基片温度变化不明显。通过对Zn1－xMnxO薄膜的吸收光谱分析得出：Mn离子的掺杂改变了ZnO薄膜的禁带宽度，随Mn离子的掺杂量的增加，薄膜禁带宽度增加；薄膜的光吸收也从直接跃迁过渡为间接跃迁过程。